丝印：4N60AF；Package：TO-220F；4A 600V N-channel enhanced field effect transistor

文件：1.06546 Mbytes 页数：7 Pages

YFWDIODE

佑风微

isc N-Channel MOSFET Transistor

文件：284.18 Kbytes 页数：2 Pages

ISC

无锡固电

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：890.05 Kbytes 页数：10 Pages

Fairchild

仙童半导体

Power MOSFET

文件：1.07614 Mbytes 页数：9 Pages

VBSEMI

微碧半导体