INTERLINE CCD IMAGE SENSOR

文件：1.54005 Mbytes 页数：51 Pages

ONSEMI

安森美半导体

丝印：4H2S40V；Package：SOT1205；Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)

1. General description Dual, standard level N-channel MOSFET in an LFPAK56D package (halfbridge configuration), using NextpowerS3 technology. An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a

文件：302.7 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4H290SEP；Package：SOT-23-THIN；TLV4H290-SEP and TLV4H390-SEP Radiation-Tolerant High-Precision Quad Comparators in Space Enhanced Plastic

1 Features • VID – V62/24636-01XE – V62/24636-02XE • Radiation - Total Ionizing Dose (TID) – TID characterized to 30krad (Si) – ELDRS-Free to 30krad (Si) – RHA/RLAT to 30krad (Si) • Radiation - Single-Event Effects (SEE) – SEL Immune to LET = 43MeV·cm 2 /mg – SET Characterized to LET = 4

文件：1.50795 Mbytes 页数：34 Pages

TI

德州仪器

丝印：4H290SEP；Package：SOT-23-THIN；TLV4H290-SEP and TLV4H390-SEP Radiation-Tolerant High-Precision Quad Comparators in Space Enhanced Plastic

1 Features • VID – V62/24636-01XE – V62/24636-02XE • Radiation - Total Ionizing Dose (TID) – TID characterized to 30krad (Si) – ELDRS-Free to 30krad (Si) – RHA/RLAT to 30krad (Si) • Radiation - Single-Event Effects (SEE) – SEL Immune to LET = 43MeV·cm 2 /mg – SET Characterized to LET = 4

文件：1.50851 Mbytes 页数：34 Pages

TI

德州仪器

丝印：4H290SEP；Package：SOT-23-THIN；TLV4H290-SEP and TLV4H390-SEP Radiation-Tolerant High-Precision Quad Comparators in Space Enhanced Plastic

1 Features • VID – V62/24636-01XE – V62/24636-02XE • Radiation - Total Ionizing Dose (TID) – TID characterized to 30krad (Si) – ELDRS-Free to 30krad (Si) – RHA/RLAT to 30krad (Si) • Radiation - Single-Event Effects (SEE) – SEL Immune to LET = 43MeV·cm 2 /mg – SET Characterized to LET = 4

文件：1.50851 Mbytes 页数：34 Pages

TI

德州仪器

丝印：4H290SEP；Package：SOT-23-THIN；TLV4H290-SEP and TLV4H390-SEP Radiation-Tolerant High-Precision Quad Comparators in Space Enhanced Plastic

1 Features • VID – V62/24636-01XE – V62/24636-02XE • Radiation - Total Ionizing Dose (TID) – TID characterized to 30krad (Si) – ELDRS-Free to 30krad (Si) – RHA/RLAT to 30krad (Si) • Radiation - Single-Event Effects (SEE) – SEL Immune to LET = 43MeV·cm 2 /mg – SET Characterized to LET = 4

文件：1.50851 Mbytes 页数：34 Pages

TI

德州仪器

4系列H2传感器

Promisense

诺联芯电子

4系列H2S传感器

Promisense

诺联芯电子

4系列H2S传感器

Promisense

诺联芯电子