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BU4311G

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

罗姆罗姆半导体集团

BU4311G

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

罗姆罗姆半导体集团

BU4311G

CMOSVoltageDetectorICswithadjustableoutputdelay.

ROHMRohm

罗姆罗姆半导体集团

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

罗姆罗姆半导体集团

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

罗姆罗姆半导体集团

BU4311G-TR

LowVoltageFreeDelayTimeSettingCMOSVoltageDetectorICSeries

GeneralDescription ROHM’sBU42xxandBU43xxseriesareCMOSVoltageDetectorICswithadjustableoutputdelay.Itisahigh-accuracy,lowcurrentconsumptionVoltageDetectorICserieswithabuilt-indelaycircuit.Thelineupwasestablishedwithtwooutputtypes(NchopendrainandCMOSoutput

ROHMRohm

罗姆罗姆半导体集团

C4311A

2C20SOLIDTCSR-PVCPVCCOMMUNICATIONCABLE

GENERALGeneral Cable Technologies Corporation

通用电气公司美国通用电气公司

CED4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-33A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CED4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-33A,RDS(ON)=18mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=30mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CEM4311

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-9.3A,RDS(ON)=18mΩ@VGS=-10V. RDS(ON)=30mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■SurfacemountPackage. ■Leadfreeproductisacquired.

CETChino-Excel Technology

华瑞华瑞股份有限公司

供应商型号品牌批号封装库存备注价格
BOURNS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
AGERE
23+
BGA
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多4311R-LF供应商 更新时间2025-7-18 17:56:00