CTNS-4306S

FastRecoveryandHighPowerDiode

CTNS-4306S

FastRecoveryDiode

FEATURES ·LowForwardVoltage,HighEfficiency ·HighRecoverySpeed APPLICATIONS ·DC-DCConverter ·PFCCircuit ·LargeCurrentSecondarySideRectifier

EC4306C

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

ERB4306

PlasticfastRecoverRectifier

ERB4306

PlasticfastRecoverRectifierReverseVoltage200to800VForwardCurrent0.5A

Features •Lowreverseleakage •Highforwardsurgecapability •Hightemperaturesolderingguaranteed:260℃/10seconds,0.375(9.5mm)leadlength.5lbs.(2.3kg)tension •LeadandbodyaccordingwithRoHSstandard MechanicalData •Terminals:Platedaxialleads •Polarity:Colorbanddeno

F4306

HCMOS,7.5x5mm,2.85VSMDOscillator

F4306R

HCMOS,7.5x5mm,2.85VSMDOscillator

FJN4306R

PNPEpitaxialSiliconTransistor

SwitchingApplication(BiasResistorBuiltIn) •Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit •BuiltinbiasResistor(R1=10KΩ,R2=47KΩ) •ComplementtoFJN3306R

FMN-4306S

SiliconDiode

Description TheFMN-4306Sisafastrecoverydiodeof600V/30A.Themaximumtrrof100nsisrealizedbyoptimizingalife-timecontrol. Features ●VRM------------------------------------------------------600V ●IF(AV)-------------------------------------------------------30A ●VF-----

FMW-4306

SiliconSchottkyBarrierDiode

Description TheFMW-4306isa60V,30ASchottkydiodewithallowingimprovementsinVFcharacteristic.Thesecharacteristicfeaturescontributetoimprovingpowersupplyefficiencyandtoenablinghigh-frequencysystems. Features ●VRSM------------------------------------------------------6