650V Field Stop IGBT

文件：1.88982 Mbytes 页数：8 Pages

MGCHIP

丝印：40T65FDSC；Package：TO-247；650V Field Stop IGBT

General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high switching series and excellent quality. This device is for PFC, UPS & Inverter applications. Features  High Speed Switching & Low Power Loss  V = 1.95V @ I = 40A

文件：1.5971 Mbytes 页数：9 Pages

MGCHIP

IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

文件：248.65 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

ONSEMI

安森美半导体