Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

文件：159.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

文件：159.1 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz

文件：39.51 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

日立日立公司