DESCRIPTION

➤ 3PT068080JL is NPN phototransistor chips that

fabricated in silicon epitaxial planar technology;

➤ The chips are widely used in photo-coupler for

switching power suppliers;

➤ It has low dark current, high sensitivity, high

responsible time etc;

➤ The top side electrode material is Al, and the

backside electrode material is Au;

➤ Chip Size: 680mm×450mm;

➤ Chip Thickness: 220±20mm;

➤ Emitter PAD Size(E): 130mm×105mm;

➤ Base PAD Size(B): 40mm × 40mm (only for chip

probing).