场效应晶体管

LGE

鲁光电子

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：230.18 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 36mΩ ID 30A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：229.45 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 36A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 58mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：322.87 Kbytes 页数：2 Pages

ISC

无锡固电