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30-06-A

HERMETICALLY SEALED CRYSTAL CAN RELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-D

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-E

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-G

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

30-06-L

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

OENINDIA

DSEC30-06

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

IXYS

DSEC30-06A

HiPerFREDEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●

IXYS

IXYS Integrated Circuits Division

IXYS

DSEC30-06B

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

IXYS

DSEC30-06B

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode

HiPerFRED LowLossandSoftRecoveryHighPerformanceFastRecoveryDiodeCommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevol

IXYS

IXYS Integrated Circuits Division

IXYS

DSEI30-06A

FastRecoveryEpitaxialDiode(FRED)

Features ●InternationalstandardpackageJEDECTO-247AD ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehavior ●EpoxymeetsUL94V-0 ●VersionARisolatedandULregisteredE153432 Applications ●Antiparalleldio

IXYS

IXYS Integrated Circuits Division

IXYS

DSEI30-06A

UltrafastRectifier

FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DSEP30-06A

UltrafastRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DSEP30-06A

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

IXYS

DSEP30-06B

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

IXYS

DSEP30-06BR

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

IXYS

DSEP30-06BR

UltrafastRecoveryDiode

FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage,highefficiency ·100avalanchetested APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

DSEP30-06CR

HiPerDynFREDTMEpitaxialDiodewithsoftrecovery(ElectricallyIsolatedBackSurface)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowcathodetotabcapacitance(

IXYS

IXYS Integrated Circuits Division

IXYS

FE30-06

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FRONTIER

FE30-06

3AFASTEFFICIENTRECTIFIER

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

FE30-06-LFR

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FRONTIER

详细参数

  • 型号:

    30-06-A

  • 制造商:

    OENINDIA

  • 制造商全称:

    OEN India Limited

  • 功能描述:

    HERMETICALLY SEALED CRYSTAL CAN RELAY

供应商型号品牌批号封装库存备注价格
23+
N/A
36200
正品授权货源可靠
询价
NXP
23+
TO-263
37650
全新原装真实库存含13点增值税票!
询价
NXP
2023+
SOT-263-
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
NXP/恩智浦
22+
SOT-263-5
20000
保证原装正品,假一陪十
询价
NXP/恩智浦
SOT426(D2Pak)TO263-5
265209
假一罚十原包原标签常备现货!
询价
NXP/恩智浦
23+
TO-263
10000
公司只做原装正品
询价
NXP/恩智浦
23+
SOT426(D2Pak)TO263-5
50000
全新原装正品现货,支持订货
询价
NXP/恩智浦
TO-263
22+
6000
十年配单,只做原装
询价
NXP/恩智浦
22+
SOT-263-5
100000
代理渠道/只做原装/可含税
询价
NXP/恩智浦
22+
TO-263
90822
终端免费提供样品 可开13%增值税发票
询价
更多30-06-A供应商 更新时间2024-4-28 11:36:00