2SK3566

SwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=5.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancement-mode:Vth=2.0~4.0V(VDS=10V,ID=1mA)

2SK3566

SiliconNChannelMOSTypeSwitchingRegulatorApplications

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=5.6Ω(typ.) •Highforwardtransferadmittance:|Yfs|=2.0S(typ.) •Lowleakagecurrent:IDSS=100μA(VDS=720V) •Enhancement-mode:Vth=2.0~4.0V(VDS=10V,ID=1mA)

2SK3566

SwitchingRegulatorApplications

2SK3566

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)≤6.4Ω. •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

2SK3566

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

I2SK3566

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(on)≤6.4Ω. •Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1.0mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation