| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=2300pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
MOSFieldEffectTransistor Features ●Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ●LowCiss:Ciss=2300pFTYP. ●Built-ingateprotectiondiode | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=2300pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=2300pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •L | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
SWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) •LowCiss:Ciss=2300pFTYP. • | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
Renesas |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
询价 | ||
Renesas |
21+ |
TO2203 |
13880 |
公司只售原装 支持实单 |
询价 | ||
RENESAS/瑞萨 |
2020+ |
6500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | |||
RENESAS/瑞萨 |
2021+ |
5055 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | |||
Renesas |
21+ |
2055 |
全新原装鄙视假货15118075546 |
询价 | |||
Renesas Electronics America |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
RENESAS |
20+ |
2055 |
只做原装 |
询价 | |||
RENESAS/瑞萨器场效应管 |
24+23+ |
MP-25TO |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
RENESAS/瑞萨 |
TO-220 |
22+ |
56000 |
全新原装进口,假一罚十 |
询价 |
