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2SK334

Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES

FEATURE •Becauseithasanultra-compactoutline,setscanbemadecompact.

SANYOSanyo

三洋三洋电机株式会社

SANYO

2SK3340-01

N-CHANNEL SILICON POWER MOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

2SK3341-01

N-CHANNEL SILICON POWER MOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreadown Lowdrivingpower Avalanche-proof Applications Switchingregulators UPS(UninterruptiblePowerSupply) DC-DCconverters

FujiFUJI CORPORATION

株式会社FUJI

Fuji

2SK3342

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)

SwitchingRegulatorandDC-DCConverterApplications MotorDriveApplications ●Lowdrain-sourceONresistance:RDS(ON)=0.8Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=4.5S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=250V) ●Enhancementmode:Vth=1.5to3.5V

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3342

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3348

Silicon N Channel MOS FET High Speed Switching

Features •Lowon-resistance RDS=1.6Ωtyp.(VGS=4V,ID=50mA) RDS=2.2Ωtyp.(VGS=2.5V,ID=50mA) •2.5Vgatedrivedevice. •Smallpackage(CMPAK)

HitachiHitachi, Ltd.

日立公司

Hitachi

2SK3348

Silicon N Channel MOS FET High Speed Switching

SiliconNChannelMOSFETHighSpeedSwitching Features •Lowon-resistance RDS=1.6Ωtyp.(VGS=4V,ID=50mA) RDS=2.2Ωtyp.(VGS=2.5V,ID=50mA) •2.5Vgatedrivedevice. •Smallpackage(CMPAK)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3349

Silicon N Channel MOS FET High Speed Switching

Features •Lowon-resistance RDS=2.8Ωtyp.(atVGS=4V,ID=25mA) RDS=4.8Ωtyp.(atVGS=2.5V,ID=10mA) •2.5Vgatedrivedevice •Smallpackage(SMPAK)

HitachiHitachi, Ltd.

日立公司

Hitachi

2SK3349

Silicon N Channel MOS FET High Speed Switching

Features •Lowon-resistance RDS=2.8Ωtyp.(atVGS=4V,ID=25mA) RDS=4.8Ωtyp.(atVGS=2.5V,ID=10mA) •2.5Vgatedrivedevice •Smallpackage(SMPAK)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

2SK3340N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3340W

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3341N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3341W

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

2SK3342

Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3342

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3342_07

Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

2SK3342_10

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

详细参数

  • 型号:

    2SK334

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
20+
SOT-23
120000
原装正品 可含税交易
询价
RENESAS/瑞萨
SOT23
7906200
询价
08PB
30000
询价
HITACHI
23+
SOT-23
31000
全新原装现货
询价
ON
23+
SOT-23
63000
原装正品现货
询价
SANYO
2023+
SMD
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
ON/安森美
22+
SOT-23
9600
原装现货,优势供应,支持实单!
询价
HITACHI
2023+
SOT-23
50000
原装现货
询价
VBSEMI
19+
SOT-23
29600
绝对原装现货,价格优势!
询价
ON/安森美
23+
SOT-23
50000
原装正品 支持实单
询价
更多2SK334供应商 更新时间2024-4-27 14:00:00