| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SK315 | FM Tuner Applications FMTunerApplications Features ·IdealforFMtunersinradios,stereos,etc. ·Becauseitiscompactlypackaged,setscanbemadecompact. ·SmallCrss(Crss=0.08pFtyp). ·Highyfs(yfs=12.0mstyp). | SANYOSanyo 三洋三洋电机株式会社 | SANYO | |
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=45mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=45mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=45mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=45mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=45mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=45mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS(on)=11.5mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS(on)=11.5mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS(on)=11.5mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistanceRDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistanceRDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=65mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=65mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=65mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET Features •Lowon-resistance RDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching Features •Lowon-resistance RDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET Features •Lowon-resistance RDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
Silicon N Channel MOS FET High Speed Power Switching •Lowon-resistance RDS=100mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
详细参数
- 型号：
2SK315
- 制造商：
RENESAS
- 制造商全称：
Renesas Technology Corp
- 功能描述：
Silicon N Channel MOS FET High Speed Power Switching
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
08PB |
60000 |
询价 | |||||
SANYO/三洋 |
22+ |
TO-92S |
20000 |
深圳原装现货正品有单价格可谈 |
询价 | ||
SANYO |
TO-92S |
8553 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
Renesas |
17+ |
TO-220 |
6200 |
询价 | |||
SANYO |
05+ |
原厂原装 |
150051 |
只做全新原装真实现货供应 |
询价 | ||
日立 |
23+ |
TO-247 |
3000 |
全新原装 |
询价 | ||
HIT |
2017+ |
TO-220F |
25899 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
日立 |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
NEC |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
HITACHI |
1999 |
2562 |
原装正品现货供应 |
询价 |
相关规格书
更多- 2SK3150
- 2SK3150(L)|2SK3150(S)
- 2SK3150L
- 2SK3150S
- 2SK3150STL-E
- 2SK3151(E)
- 2SK3152
- 2SK3153
- 2SK3154-E
- 2SK3155-E
- 2SK3156-E
- 2SK3157-E
- 2SK3158-E
- 2SK3159(E)
- 2SK3160
- 2SK3161L-E
- 2SK3161STL-E
- 2SK3162
- 2SK3162-E
- 2SK3163(E)
- 2SK317
- 2SK3175A
- 2SK3176(F)
- 2SK3176_09
- 2SK3177-E
- 2SK3179
- 2SK319
- 2SK320
- 2SK3203(L).2SK3203(S)
- 2SK3205
- 2SK3205(T6L1HITJNQ
- 2SK3205(TE16L1,NQ)
- 2SK3207
- 2SK3209-E
- 2SK3210
- 2SK3210L
- 2SK3210S-E
- 2SK3211
- 2SK3211(L)|2SK3211(S)
- 2SK3211L
- 2SK3211S
- 2SK3212
- 2SK3214
- 2SK321601
- 2SK3216-01SC
相关库存
更多- 2SK3150(L)
- 2SK3150(S)
- 2SK3150L-E
- 2SK3150S-E
- 2SK3151
- 2SK3151-E
- 2SK3152-E
- 2SK3154
- 2SK3155
- 2SK3156
- 2SK3157
- 2SK3158
- 2SK3159
- 2SK316
- 2SK3160-E
- 2SK3161S
- 2SK3161STR-E
- 2SK3162(E)
- 2SK3163
- 2SK3163-E
- 2SK3174A
- 2SK3176
- 2SK3176_07
- 2SK3177
- 2SK3178
- 2SK318
- 2SK3199
- 2SK3200
- 2SK3204
- 2SK3205(Q)
- 2SK3205(T6L1HIUO,N
- 2SK3205_06
- 2SK3209
- 2SK321
- 2SK3210(L)|2SK3210(S)
- 2SK3210S
- 2SK3210STL
- 2SK3211(L)
- 2SK3211(S)
- 2SK3211L-E
- 2SK3211STL-E
- 2SK3212-E
- 2SK3215
- 2SK3216-01
- 2SK3217-01MR
