SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP.

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID

文件：237.73 Kbytes 页数：10 Pages

RENESAS

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isc N-Channel MOSFET Transistor

文件：324.24 Kbytes 页数：2 Pages

ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Renesas

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