Silicon N Channel MOS FET High Speed Power Switching

Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source

文件：95.57 Kbytes 页数：9 Pages

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Silicon N Channel MOS FET High Speed Power Switching

Features * Low on-resistance Rds = 0.060ohm type. * High Speed Switching. * 4V gate drive device can be driven from 5V source

文件：95.57 Kbytes 页数：9 Pages

RENESAS

瑞萨

N-Channel Silicon MOSFET

Features ● Low on-resistance RDS =0.060 typ. ● High speed switching ● 4V gate drive device can be driven from 5V source

文件：45.47 Kbytes 页数：1 Pages

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Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS=0.060 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source

文件：53.81 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

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