首页 >2SK2912S(TR-E)>规格书列表

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2SK2912

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi, Ltd.

日立公司

2SK2912

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK2912L

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK2912L

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK2912L

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi, Ltd.

日立公司

2SK2912L-E

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK2912S

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

HitachiHitachi, Ltd.

日立公司

2SK2912S

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK2912S

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SK2912STL-E

SiliconNChannelMOSFETHighSpeedPowerSwitching

SiliconNChannelMOSFET HighSpeedPowerSwitching Features •Lowon-resistance RDS=15mΩtyp. •Highspeedswitching •4Vgatedrivedevicecanbedrivenfrom5Vsource

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    2SK2912S(TR-E)

  • 制造商:

    Renesas Electronics Corporation

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
22+
TO-263
20000
保证原装正品,假一陪十
询价
R
23+
LDPAK(S)-(1)
33500
全新原装真实库存含13点增值税票!
询价
R
23+
LDPAK(S)-(1)
10000
公司只做原装正品
询价
R
LDPAK(S)-(1)
22+
6000
十年配单,只做原装
询价
R
22+
LDPAK(S)-(1)
25000
只做原装进口现货,专注配单
询价
RENESAS/瑞萨
22+
TO-263
25800
原装正品支持实单
询价
RENESAS
23+
SOT-263
8890
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
RENESAS
2017+
SOT-263
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
23+
N/A
36500
正品授权货源可靠
询价
RENESAS/瑞萨
23+
TO263
50000
全新原装正品现货,支持订货
询价
更多2SK2912S(TR-E)供应商 更新时间2024-4-21 14:11:00