SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS (on) = 4.0 W (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 900 pF TYP. • High Avalanche Ca

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc N-Channel MOSFET Transistor

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ISC

无锡固电

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.FEATURES\n• Low On-Resistance\nRDS (on)= 4.0 Ω(VGS= 10 V, ID= 2.0 A)\n• Low CissCiss= 900 pF TYP.\n• High Avalanche Capability Ratings\n• Isolated TO-220 Package • Low On-Resistance\n• Low CissCiss= 900 pF TYP.\n• Isolated TO-220 Package;

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