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2SJ604.

P-Channel 60 V (D-S) 175 째C MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

2SJ604-S

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ604-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ604-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SJ604-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ604-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesigned forsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SJ604-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-45A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SJ604-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHINGP-CHANNELPOWERMOSFET DESCRIPTION The2SJ604isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Superlowon-stateresistance: RDS(on)1=30mΩMAX.(VGS=−10V,ID=−23A) RDS(on)2=43mΩMAX.(VGS=−4.0V,ID=−23A) •Lowinput

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
24+
TO-220-3
60000
询价
RENESAS/瑞萨
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NEC
23+
TO-220
50000
全新原装正品现货,支持订货
询价
RENESAS
23+
TO-220
50000
全新原装正品现货,支持订货
询价
RENESAS
11+
TO-220
900
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
RENESAS/瑞萨
2023+
TO-220
8635
一级代理优势现货,全新正品直营店
询价
NEC
24+
NA/
950
优势代理渠道,原装正品,可全系列订货开增值税票
询价
RENESAS
2023+
TO-220
8800
正品渠道现货 终端可提供BOM表配单。
询价
RENESAS/瑞萨
2223+
TO-220
26800
只做原装正品假一赔十为客户做到零风险
询价
RENESAS
21+
TO-220
940
原装现货假一赔十
询价
更多2SJ604.供应商 更新时间2025-7-26 13:31:00