Silicon P Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 0.11 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching

文件：56.25 Kbytes 页数：9 Pages

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

文件：97.39 Kbytes 页数：9 Pages

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance RDS (on)= 0.11 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching

文件：97.39 Kbytes 页数：9 Pages

RENESAS

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Silicon P Channel MOS FET High Speed Power Switching

•  Low on-resistance\n    RDS(on)= 0.11 Ωtyp.\n•  Low drive current\n•  4 V gete drive devices\n•  High speed switching;

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Power MOSFETs

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