2SJ210C

Power MOSFETs for Automotive; • Directly driven by a 4.5 V power source.\n• Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = -4.5 V, ID = -50 mA)\n;

Support is limited to customers who have already adopted these products.\n\nThe 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 5 V power source.

2SJ210C

P-CHANNEL MOSFET FOR SWITCHING

Description The2SJ210C,P-channelverticaltypeMOSFETdesignedforgeneral-purposeswitch,isadevicewhichcanbedrivendirectlybya4.5Vpowersource. Features ●Directlydrivenbya4.5Vpowersource. ●Lowon-stateresistance RDS(on)1=2.7MAX.(VGS=-10V,ID=-100mA)

2SJ210C-T1B-A

P-CHANNEL MOSFET FOR SWITCHING

Description The2SJ210C,P-channelverticaltypeMOSFETdesignedforgeneral-purposeswitch,isadevicewhichcanbedrivendirectlybya4.5Vpowersource. Features ●Directlydrivenbya4.5Vpowersource. ●Lowon-stateresistance RDS(on)1=2.7MAX.(VGS=-10V,ID=-100mA)

2SJ210C-T1B-AT

P-CHANNEL MOSFET FOR SWITCHING

Description The2SJ210C,P-channelverticaltypeMOSFETdesignedforgeneral-purposeswitch,isadevicewhichcanbedrivendirectlybya4.5Vpowersource. Features ●Directlydrivenbya4.5Vpowersource. ●Lowon-stateresistance RDS(on)1=2.7MAX.(VGS=-10V,ID=-100mA)

2SJ210

P-ChannelMOSFET

2SJ210

MOSFIELDEFFECTTRANSISTOR

P-CHANNELMOSFETFORSWITCHING The2SJ210,P-channelverticaltypeMOSFET,isaswitchingdevicewhichcanbedrivendirectlybytheoutputofICshavinga5Vpowersource. The2SJ210hasexcellentswitchingcharacteristicsandissuitableasahigh-speedswitchingdeviceindigitalcircuits.

2SJ210

MOSFiedEffectTransistor

Features ●DirectlydrivenbyIcshavinga5Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseof itshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresistor.

2SJ210

P-CHANNELMOSFETFORSWITCHING