2SJ210

MOS Fied Effect Transistor

Features ●DirectlydrivenbyIcshavinga5Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseof itshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresistor.

2SJ210

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFETFORSWITCHING The2SJ210,P-channelverticaltypeMOSFET,isaswitchingdevicewhichcanbedrivendirectlybytheoutputofICshavinga5Vpowersource. The2SJ210hasexcellentswitchingcharacteristicsandissuitableasahigh-speedswitchingdeviceindigitalcircuits.

2SJ210

P-CHANNEL MOSFET FOR SWITCHING; • Directly driven by the output of ICs having a 5 V power source.\n• Not necessary to consider driving current because of its high input impedance.\n• Possible to reduce the number of parts by omitting the bias resistor. ;

The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.\nThe 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.FEATURES\n• Directly driven by the output of ICs having a 5 V power source.\n• Not necessary to consider driving current because of its high input impedance.\n• Possible to reduce the number of parts by omitting the bias resistor.

2SJ210

P-CHANNEL MOS FET FOR SWITCHING

2SJ210

P-Channel MOSFET

2SJ210C

P-CHANNEL MOSFET FOR SWITCHING

Description The2SJ210C,P-channelverticaltypeMOSFETdesignedforgeneral-purposeswitch,isadevicewhichcanbedrivendirectlybya4.5Vpowersource. Features ●Directlydrivenbya4.5Vpowersource. ●Lowon-stateresistance RDS(on)1=2.7MAX.(VGS=-10V,ID=-100mA)

2SJ210C

Power MOSFETs for Automotive; • Directly driven by a 4.5 V power source.\n• Low on-state resistance RDS(on)1 = 2.7 Ω MAX. (VGS = -10 V, ID = -100 mA) RDS(on)2 = 3.2 Ω MAX. (VGS = -4.5 V, ID = -50 mA)\n;

Support is limited to customers who have already adopted these products.\n\nThe 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4. 5 V power source.

2SJ210C-T1B-A

P-CHANNEL MOSFET FOR SWITCHING

Description The2SJ210C,P-channelverticaltypeMOSFETdesignedforgeneral-purposeswitch,isadevicewhichcanbedrivendirectlybya4.5Vpowersource. Features ●Directlydrivenbya4.5Vpowersource. ●Lowon-stateresistance RDS(on)1=2.7MAX.(VGS=-10V,ID=-100mA)

2SJ210C-T1B-AT

P-CHANNEL MOSFET FOR SWITCHING

Description The2SJ210C,P-channelverticaltypeMOSFETdesignedforgeneral-purposeswitch,isadevicewhichcanbedrivendirectlybya4.5Vpowersource. Features ●Directlydrivenbya4.5Vpowersource. ●Lowon-stateresistance RDS(on)1=2.7MAX.(VGS=-10V,ID=-100mA)

2SJ210-T1B-A

P-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC