MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.

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MOS Fied Effect Transistor

Features ● Directly driven by Ics having a 5V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the biasresistor.

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P-Channel MOSFET

文件：998.18 Kbytes 页数：3 Pages

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P-CHANNEL MOS FET FOR SWITCHING

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NEC

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P-CHANNEL MOSFET FOR SWITCHING

The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.\nThe 2SJ210 has excellent switching characteristics and is suitable as a high-speed switching device in digital circuits.FEATURES\n• Directly driven by the o • Directly driven by the output of ICs having a 5 V power source.\n• Not necessary to consider driving current because of its high input impedance.\n• Possible to reduce the number of parts by omitting the bias resistor. ;

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P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)

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P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)

文件：162.68 Kbytes 页数：8 Pages

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P-CHANNEL MOSFET FOR SWITCHING

Description The 2SJ210C, P-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features ● Directly driven by a 4.5 V power source. ● Low on-state resistance RDS(on)1 = 2.7  MAX. (VGS = -10 V, ID = -100 mA)

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P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

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VBSEMI

微碧半导体

P-Channel MOSFET

文件：998.18 Kbytes 页数：3 Pages

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