Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

文件：48.29 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

文件：86.66 Kbytes 页数：6 Pages

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瑞萨

Silicon P Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Application High speed power switching

文件：86.66 Kbytes 页数：6 Pages

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瑞萨

Transistors>Switching/MOSFETs

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