Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Transistor Silicon NPN Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = 160 V • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2220

文件：173.51 Kbytes 页数：5 Pages

TOSHIBA

东芝

230V / 15A, AF100W Output Applications

230V / 15A, AF100W Output Applications Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Applications • 230V / 15A, AF100W output applications.

文件：317.22 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

文件：62.86 Kbytes 页数：4 Pages

SANYO

三洋

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A • Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Relay drivers,lamp drivers,motor dri

文件：271.51 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C6144；Package：TO-220F-3SG；High-Current Switching Applications

NPN Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor drivers

文件：309.06 Kbytes 页数：4 Pages

SANYO

三洋

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS

Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS Features • Adoption of MBIT process • Large current capacitance (IC=10A) • Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) • High-speed switching (tf=25ns(typ.)) Applications • Relay drivers, lamp drivers, motor

文件：240.25 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPN Triple Diffused Planar Silicon Transistor Features • High breakdown voltage. • Ultrahigh-speed switching. • Wide ASO. • Adoption of MBIT process.

文件：55.05 Kbytes 页数：4 Pages

SANYO

三洋

High Voltage Switching Applications

文件：212.79 Kbytes 页数：5 Pages

TOSHIBA

东芝