2SC6106资料使用说明书供应价格三洋SANYO-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
2SC6106	文件：49.36 Kbytes Page：4 Pages	NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications NPNTripleDiffusedPlanarSiliconTransistor Features •Highbreakdownvoltageandhighreliability. •Ultrahigh-speedswitching. •WideASO. •AdoptionofMBITprocess.	SANYOSanyo 三洋三洋电机株式会社
2SC6112	文件：56.09 Kbytes Page：4 Pages	NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications NPNTripleDiffusedPlanarSiliconTransistor Features •Highbreakdownvoltageandhighreliability. •Ultrahigh-speedswitching. •WideASO. •AdoptionofMBITprocess.	SANYOSanyo 三洋三洋电机株式会社
2SC6113	文件：57.66 Kbytes Page：4 Pages	NPN Triple Diffused Planar Silicon Transistor For 14, 21 inch TV Power Supply NPNTripleDiffusedPlanarSiliconTransistor Features •Highbreakdownvoltageandhighreliability. •Ultrahigh-speedswitching. •WideASO. •AdoptionofMBITprocess. •AttachmentworkabilityisgoodbyMica-lesspackage. Applications •Recommendedforusein14,21inchTVpowersuppl	SANYOSanyo 三洋三洋电机株式会社
2SC6117	文件：53.62 Kbytes Page：4 Pages	NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications NPNTripleDiffusedPlanarSiliconTransistor Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.	SANYOSanyo 三洋三洋电机株式会社
2SC6118LS	文件：52.51 Kbytes Page：4 Pages	NPN Triple Diffused Planar Silicon Transistor Color TV Horizontal Deflection Output Applications NPNTripleDiffusedPlanarSiliconTransistor Features •Highspeed. •Highbreakdownvoltage(VCBO=1500V). •Highreliability(AdoptionofHVPprocess). •AdoptionofMBITprocess. •On-chipdamperdiode.	SANYOSanyo 三洋三洋电机株式会社
2SC6124	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6125	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6126	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6127	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6139	文件：191.64 Kbytes Page：5 Pages	Transistor Silicon NPN Epitaxial Type ○AudioFrequencyAmplifierApplications •Highcollectorvoltage:VCEO=160V(min) •Smallcollectoroutputcapacitance:Cob=12pF(typ.) •Hightransitionfrequency:fT=100MHz(typ.) •Complementaryto2SA2219	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6139	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6140	文件：173.51 Kbytes Page：5 Pages	Transistor Silicon NPN Epitaxial Type ○AudioFrequencyAmplifierApplications •Highcollectorvoltage:VCEO=160V •Smallcollectoroutputcapacitance:Cob=12pF(typ.) •Hightransitionfrequency:fT=100MHz(typ.) •Complementaryto2SA2220	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6140	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6141	文件：317.22 Kbytes Page：4 Pages	230V / 15A, AF100W Output Applications 230V/15A,AF100WOutputApplications Features •Largecurrentcapacitance. •WideASOandhighdurabilityagainstbreakdown. •AdoptionofMBITprocess. Applications •230V/15A,AF100Woutputapplications.	SANYOSanyo 三洋三洋电机株式会社
2SC6142	文件：1.58274 Mbytes Page：73 Pages	Bipolar Small-Signal Transistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBAToshiba Semiconductor 东芝株式会社東芝
2SC6144	文件：62.86 Kbytes Page：4 Pages	NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications High-CurrentSwitchingApplications Features •AdoptionofMBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. Applications •Relaydrivers,lampdrivers,motordrivers.	SANYOSanyo 三洋三洋电机株式会社
2SC6144	文件：271.51 Kbytes Page：2 Pages	isc Silicon NPN Power Transistors DESCRIPTION •Collector-EmitterSaturationVoltage- :VCE(sat)=0.36V(Max.)@IC=6A •Collector-EmitterBreakdownVoltage- :V(BR)CEO=50V(Min) •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Relaydrivers,lampdrivers,motordri	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
2SC6144SG	文件：309.06 Kbytes Page：4 Pages	High-Current Switching Applications NPNEpitaxialPlanarSiliconTransistor Features •AdoptionofMBITprocess •Largecurrentcapacitance(IC=10A) •Lowcollector-to-emittersaturationvoltage(VCE(sat)=180mV(typ.)) •High-speedswitching(tf=25ns(typ.)) Applications •Relaydrivers,lampdrivers,motordrivers	SANYOSanyo 三洋三洋电机株式会社
2SC6144SG	文件：240.25 Kbytes Page：7 Pages	Bipolar Transistor 50V, 10A, Low VCE(sat) NPN TO-220F-3FS BipolarTransistor 50V,10A,LowVCE(sat)NPNTO-220F-3FS Features •AdoptionofMBITprocess •Largecurrentcapacitance(IC=10A) •Lowcollector-to-emittersaturationvoltage(VCE(sat)=180mV(typ.)) •High-speedswitching(tf=25ns(typ.)) Applications •Relaydrivers,lampdrivers,motor	ONSEMION Semiconductor 安森美半导体安森美半导体公司
2SC6146	文件：55.05 Kbytes Page：4 Pages	NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications NPNTripleDiffusedPlanarSiliconTransistor Features •Highbreakdownvoltage. •Ultrahigh-speedswitching. •WideASO. •AdoptionofMBITprocess.	SANYOSanyo 三洋三洋电机株式会社

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详细参数

型号：
2SC61
制造商：
SANYO
制造商全称：
Sanyo Semicon Device
功能描述：
NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

供应商	型号	品牌	批号	封装	库存	备注	价格
无锡固电半导体股份有限公司	2SC6106	isc	2024	TO-251/TO-252	11000	国产品牌isc,可替代原装	询价
深圳好佳好科技有限公司	2SC6106-TL	SANYO	360000	原厂原装	1305		询价
深圳市百视威讯电子科技有限公司	2SC6106-TL-E		23+	N/A	89950	正品授权货源可靠	询价
深圳市纳立科技有限公司	2SC6106-TL-E		三年内		1983	纳立只做原装正品13590203865	询价
深圳市仟禧电子有限公司	2SC6106-TL-E	SANYO/三洋	22+	SOT-252	20000	保证原装正品,假一陪十	询价
贸泽芯城（深圳）电子科技有限公司	2SC6106-TL	SANYO/三洋	2021+	SOT-252	18900	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市金芯世纪电子有限公司	2SC6106-TL-E	SANYO/三洋	22+	SOT-252	100000	代理渠道/只做原装/可含税	询价
深圳市旺财半导体有限公司	2SC6106-TL	SANYO	23+	SOT-252	4000	正品原装货价格低qq:2987726803	询价
深圳市创新迹电子有限公司	2SC6106-TL-E	ON/安森美	2023+		8700	原装现货	询价
深圳市惊羽科技有限公司	2SC6106-TL-E	SANYO-三洋	24+25+/26+27+	TO-252-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多2SC61供应商更新时间2024-4-28 12:05:00

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