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2SC5810

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.1A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.17V(max) •High-speedswitching:tf=85ns(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5810

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5811

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-DefinitionCRTDisplayHorizontalDeflectionOutputApplications Feature high-voltage:VCBO=1600V. •Highreliability(HVPprocessadopted).·MBITprocessadopted.

SANYOSanyo

三洋三洋电机株式会社

2SC5812

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features •Highpowergain,Lownoisefigureatlowpoweroperation: |S21|2=17dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

HitachiHitachi, Ltd.

日立公司

2SC5812

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application •Highpowergain,Lownoisefigureatlowpoweroperation: |S21|2=17dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SC5812WG-TR-E

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application •Highpowergain,Lownoisefigureatlowpoweroperation: |S21|2=17dBtyp,NF=1.0dBtyp(VCE=1V,IC=5mA,f=900MHz)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SC5813

Silicon NPN epitaxial planar type

SiliconNPNepitaxialplanartype ForDC-DCconverter ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •Minitypepackage,allowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Corporation

松下松下电器

2SC5814

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5815

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5816

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5817

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814,2SC5815,2SC5816,2SC5817isasuperminipackagesiliconNPNepitaxialtypetransistor.Itisdesignedforlowfrequencyvoltageamplifyapplication. FEATURE ●Facilitatesminiaturizationandhigh-densitymounting ●ExcellentlinearityofDCforwardcurrentgain ●Lowcolle

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5819

High-Speed Switching Applications

High-SpeedSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=400to1000(IC=0.15A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=45ns(typ.)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5819

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5814

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5814_10

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5815

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5815_10

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXAIL TYPE

ISAHAYAIsahaya Electronics Corporation

Isahaya电子公司

2SC5819

High-Speed Switching Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC5819_04

High-Speed Switching Applications

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SC581300L

包装:散装 封装/外壳:TO-236-3,SC-59,SOT-23-3 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 1.5A MINI3

Panasonic Electronic Components

Panasonic Electronic Components

详细参数

  • 型号:

    2SC581

  • 功能描述:

    MOSFET Power Trans 100V 0.17V Vce 85ns

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
2019+
SOT89
36000
原盒原包装 可BOM配套
询价
TOSHIBA/东芝
SOT89
7906200
询价
TOSHIBA
1408+
SOT89
12000
绝对原装进口现货可开增值税发票
询价
toshiba
23+
BGA
8000
全新原装现货,欢迎来电咨询
询价
TOSHIBA
2017+
SOT89
42500
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
TOSHIBA
2008++
SOT-89
8200
新进库存/原装
询价
TOSHIBA
17+
SOT-89
6200
100%原装正品现货
询价
TOSHIBA
23+
SOT-89
60000
原装正品,假一罚十
询价
TOSHIBA
23+
SOT89
12000
全新原装优势
询价
TOSHIBA
2020+
SOT-89
3000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多2SC581供应商 更新时间2024-4-29 16:03:00