Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：28.74 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 10.8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：261.92 Kbytes 页数：2 Pages

ISC

无锡固电

Horizontal Deflection Switching Transistors

ONSEMI

安森美半导体

SOT343

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-92

ROHM

罗姆

上传：深圳市鸿昌盛电子科技有限公司