Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications

VHF to UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz)

文件：95.25 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Radio-frequency bipolar transistor

Application Scope：VHF/UHF band low noise amplifier\nPolarity：NPN\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.08 A \nCollector power dissipation PC 150 mW \nJunction temperature Tj 125 ℃ \nCollector-emitter voltage VCEO 12 V ;

Toshiba

东芝

Package：SC-61AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 12V 8GHZ SMQ

Toshiba Semiconductor and Storage