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2SC1623A

NPNSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •HighDCCurrentGain: hFE=200TYP.(VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V SILICONTRANSISTOR

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SC1623F

NPNEpitaxialPlanarTransistor

DESCRIPTION The2SC1623FisdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC1623-HF

GeneralPurposeTransistors

Features -EpoxymeetsUL-94V-0flammability rating. -Surfacemountpackageideallysuitedfor automaticinsertion.

COMCHIPComchip Technology

典琦典琦科技股份有限公司

2SC1623K

NPNEpitaxialPlanarTransistor

FEATURE •HighDCcurrentgain:hFE=200(Typ),VCE=6V,IC=1mA. •HighVoltage:VCEO=50V.

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC1623Q

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

2SC1623R

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

2SC1623S

GeneralPurposeTransistors

GeneralPurposeTransistors Pb-Freepackkageisavailable

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

2SC1623T

SiliconNPNtransistorinaSOT-89PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-89PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812T. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

2SC1623W

NPNSiliconEpitaxialPlanarTransistor

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

2SC1623W

SiliconNPNtransistorinaSOT-323PlasticPackage

Descriptions SiliconNPNtransistorinaSOT-323PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812W. Applications Audiofrequencygeneralamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

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