2SB817C

Silicon PNP Power Transistor

DESCRIPTION •LowCollectorSaturationVoltage- :VCE(sat)=-2.0V(Max.)@IC=-5A •GoodLinearityofhFE •HighCurrentCapability •WideAreaofSafeOperation •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforaudio

2SB817C

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features •Largecurrentcapacitance •WideSOAandhighdurabilityagainstbreakdown •AdoptionofMBITprocess

2SB817C

140V / 12A, AF 80W Output Applications

Features •Largecurrentcapacitance. •WideASOandhighdurabilityagainstbreakdown. •AdoptionofMBITprocess.

2SB817C-1E

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features •Largecurrentcapacitance •WideSOAandhighdurabilityagainstbreakdown •AdoptionofMBITprocess

2SB817C-1E

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-3P-3，SC-65-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 12A TO3P-3L

2SB817

POWERTRANSISTORS(12A,140V,100W)

2SB817

PNPPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER)

AUDIOPOWERAMPLIFIER DCTODCCONVERTER ●HighCurrentCapability ●HighPowerDissipation ●Complementaryto2SD1047

2SB817

140V/12A,AF60WOutputApplications??????

Features •Capableofbeingmountedeasilybecauseofone pointfixingtypeplasticmoldedpackage(Inter changeablewithTO-3). •WideASObecauseofon-chipballastresistance. •GooddepenedenceoffToncurrentandexcellent highfrequencyresponce. Thedescriptionsinpare

2SB817

SiliconPNPPowerTransistors

2SB817

ComplementarySiliconPowerTtransistors

DESCRIPTION Itisintentedforuseinpower amplifierandswitchingapplications.

2SB817

SiliconPNPPowerTransistors

2SB817

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SD1047 APPLICATIONS •140V/12AAF60Woutputapplications

2SB817

SiliconPNPtransistorinaTO-3PPlasticPackage.

2SB817

SiliconPNPPowerTransistors

2SB817

TO-3PPlastic-EncapsulateTransistors

2SB817

SiliconPNPPowerTransistor

2SB817

140V/12AAF60WOutputApplications

Features •Capableofbeingmountedeasilybecauseofone pointfixingtypeplasticmoldedpackage(Inter changeablewithTO-3). •WideASObecauseofon-chipballastresistance. •GooddepenedenceoffToncurrentandexcellent highfrequencyresponce. Thedescriptionsinpare

2SB817E

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-140V(Min) •GoodLinearityofhFE •HighCurrentCapability •WideAreaofSafeOperation •ComplementtoType2SD1047E •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIO

2SB817E

PowerTransistor(PNP)

Features •2SB817Etransistorisdesignedforuseingeneralpurpose poweramplifier,application