Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

文件：80.13 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

140V / 12A, AF 80W Output Applications

Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process.

文件：450.72 Kbytes 页数：2 Pages

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max.) @IC= -5A • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio

文件：264.36 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Transistor -140V, -12A, Low VCE(sat) PNP TO-3P-3L

Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process

文件：80.13 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

2SB817C: Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L

2SB817C is Bipolar Transistor, -140V, -12A, Low VCE(sat) PNP TO-3P-3L. Large current capacitance\nWide SOA and high durability against breakdown\nAdoption of MBIT process;

ONSEMI

安森美半导体

Package：TO-3P-3，SC-65-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 12A TO3P-3L

ONSEMI

安森美半导体