PNP Silicon Medium Power Transistor

FEATURES\nPower dissipation\n  PCM : 500mW˄Tamb=25ć˅\nCollector current\n  ICM :-1 A\nCollector-base voltage\n  VB(BR)CBO: -30 V\nOperating and storage junction temperature range\n  TJˈTstg: -55ćto +150ć Power dissipation\n  PCM : 500mW˄Tamb=25ć˅\nCollector current\n  ICM :-1 A\nCollector-base voltage\n  VB(BR)CBO: -30 V\nOperating and storage junction temperature range\n  TJˈTstg: -55ćto +150ć;

Secos

喜可士

PNP Transistors

文件：890.74 Kbytes 页数：2 Pages

KEXIN

科信电子

PNP Transistors

文件：910.62 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A ■Features ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

文件：39.5 Kbytes 页数：2 Pages

Panasonic

松下

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

文件：63.29 Kbytes 页数：1 Pages

TEL

Silicon PNP Epitaxial Planar Type

Features Large collector power dissipation PC Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing

文件：52.56 Kbytes 页数：2 Pages

KEXIN

科信电子