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2SB601

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING FEATURES •High-DCcurrentgainduetoDarlingtonconnection •Lowcollectorsaturationvoltage •Lowcollectorcutoffcurrent •IdealforuseindirectdrivefromICoutput

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SB601

SiliconPNPDarlingtonPowerTransistor

DESCRIPTION •HighDCCurrentGain- :hFE=2000(Min)@lc=-3A •Collector-EmitterSustainingVoltage- :VCEO(sus)=-100V(Min) •LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.5V(Max)@lc=-3A APPLICATIONS •Designedforuseinlow-frequencypoweramplifiersandlow-speeds

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2SB601

SiliconPNPPowerTransistors

SAVANTIC

Savantic, Inc.

2SB601

PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING FEATURES •High-DCcurrentgainduetoDarlingtonconnection •Lowcollectorsaturationvoltage •Lowcollectorcutoffcurrent •IdealforuseindirectdrivefromICoutputfo

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SB601

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierandlow-speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SB601

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Cpackage •DARLINGTON •HighDCcurrentgain •Lowcollectorsaturationvoltage APPLICATIONS •Forlow-frequencypoweramplifierandlow-speedswitchingapplications

SAVANTIC

Savantic, Inc.

2SB601

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·DARLINGTON ·HighDCcurrentgain ·Lowcollectorsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierandlow-speedswitchingapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

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