首页 >2SB1694FRA>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

2SB1694

SOT-323Plastic-EncapsulateTransistors

FEATURES HighDCCurrentGain HighCollectorCurrent LowCollector-emitterSaturationVoltage APPLICATIONS LowFrequencyAmplifierDrive

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

2SB1694

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighCollectorCurrent ●LowCollector-emitterSaturationVoltage APPLICATIONS ●LowFrequencyAmplifierDrive

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SB1694

PNPGneralPurposeTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain •HighCollectorCurrent •LowCollector-emitterSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavail

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

2SB1694

Generalpurposeamplification(-30V,-1A)

Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦-380mVatIC=-500mA/IB=-25mA 3)Complementsthe2SD2656. Application LOWFREQUENCYAMPLIFIER

ROHMRohm

罗姆罗姆半导体集团

2SB1694

Generalpurposeamplification(??0V,??A)

ROHMRohm

罗姆罗姆半导体集团

2SB1694

Generalpurposeamplification(−30V,−1A)

ROHMRohm

罗姆罗姆半导体集团

供应商型号品牌批号封装库存备注价格