首页 >2SB1694FRA>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SOT-323Plastic-EncapsulateTransistors FEATURES HighDCCurrentGain HighCollectorCurrent LowCollector-emitterSaturationVoltage APPLICATIONS LowFrequencyAmplifierDrive | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●HighCollectorCurrent ●LowCollector-emitterSaturationVoltage APPLICATIONS ●LowFrequencyAmplifierDrive | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
PNPGneralPurposeTransistors Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •HighDCCurrentGain •HighCollectorCurrent •LowCollector-emitterSaturationVoltage •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavail | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
Generalpurposeamplification(-30V,-1A) Features 1)Acollectorcurrentislarge 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦-380mVatIC=-500mA/IB=-25mA 3)Complementsthe2SD2656. Application LOWFREQUENCYAMPLIFIER | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Generalpurposeamplification(??0V,??A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Generalpurposeamplification(−30V,−1A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM |
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