2SB1658

AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS

FEATURES •LowVCE(sat)VCE(sat)=−0.15VMax(@lC/lB=1.0A/50mA) •HighDCCurrentGainhEF=150to600(@VCE=−2.0V,lC=−1.0A)

2SB1658

Silicon PNP Power Transistors

DESCRIPTION ▪WithTO-126package ▪Lowcollectorsaturationvoltage ▪HighDCcurrentgain APPLICATIONS •Foraudiofrequencyamplifierandswitchingapplications

2SB1658

Silicon PNP Power Transistors

DESCRIPTION ▪WithTO-126package ▪Lowcollectorsaturationvoltage ▪HighDCcurrentgain APPLICATIONS •Foraudiofrequencyamplifierandswitchingapplications

2SB1658

Silicon PNP Power Transistors

DESCRIPTION ▪WithTO-126package ▪Lowcollectorsaturationvoltage ▪HighDCcurrentgain APPLICATIONS •Foraudiofrequencyamplifierandswitchingapplications

2SB1658

PNP General Purpose Transistor

FEATURES •HighCurrent •AmplifierandSwitchingApplications

2SB1658

Silicon PNP transistor in a TO-126F Plastic Package

Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features Lowsaturationvoltage,highDCcurrentgain Applications Audiofrequencypoweramplifierandswitchingapplications.

2SB1658

TRANSISTOR (PNP)

FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:-5A Collector-basevoltageV(BR)CBO:-30V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SB1658

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR(PNP) FEATURES ●LowVCE(sat) ●HighDCCurrentGain

2SB1658

SILICON TRANSISTOR

AUDIOFREQUENCYAMPLIFIER,SWITCHING PNPSILICONEPITAXIALTRANSISTORS FEATURES ·LowVCE(sat) VCE(sat)=-0.15VMax(@lC/lB=1.0A/50mA) ·HighDCCurrentGain hEF=150to600(@VCE=-2.0V,lC=-1.0A)

2SB1658

Silicon PNP Power Transistors

2SB1658_15

Silicon PNP Power Transistors

2SB1658_2014

Silicon PNP Power Transistors