首页 >2SB1431(K)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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SiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,IC=-3A) •LowCollectorSaturationVoltage- :VCE(sat)=-1.5V(Max)@(lc=-3A,IB=-3mA) APPLICATIONS •Designedforlow-frequencypoweramplifiersandlo | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-100V(Min) •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,IC=-3A) •LowCollectorSaturationVoltage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation A | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SILICONPOWERTRANSISTOR | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION) FORLOW-FREQUENCYPOWERAMPLIFIERSANDLOW-SPEEDSWITCHING The2SB1431isaDarlingtonpowertransistorthatcandirectlydrivefromtheICoutput.ThistransistorisidealformotordriversandsolenoiddriversinsuchasOAandFAequipm | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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