首页 >2SB1412RTL>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HIGHVOLTAGESWITCHINGTRANSISTOR | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
SiliconPNPtransistorinaTO-252PlasticPackage. Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics,complementsthe2SD2118. Applications Mediumpoweramplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
iscSiliconNPNPowerTransistor DESCRIPTION •Smallandslimpackagemakingiteasytomake2SB1205-usedsetsmaller •Lowcollector-to-emittersaturationvoltage •Fastswitchingspeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifie | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TO-251-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES PowerAmplifierApplications | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
Lowfrequencytransistor(−20V,−5A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
Lowfrequencytransistor(−20V,−5A) | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
PNPSiliconLowFrequencyTransistor Features 1)LowVCE(sat). 2)ExcellentDCcurrentgaincharacteristics 3)Complementsthe2SD2118 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LowFrequencyTransistor Features ●LowVCE(sat). ●PNPsilicontransistor. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN | ||
HIGHVOLTAGESWITCHINGTRANSISTOR ■DESCRIPTION TheUTC2SB1412isanepitaxialplanartypePNPsilicontransistor. ■FEATURES *ExcellentDCcurrentgaincharacteristics *LowVCE(SAT) VCE(SAT)=-0.35V(Typ) (IC/IB=-4A/-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
PNPEPITAXIALPLANARTRANSISTOR Features: *ExcellentDCCurrentGainCharacteristics *LowVCE(Sat) | WEITRON Weitron Technology | WEITRON |
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