2SB1386PPT

PNP Epitaxial Transistor

VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(DPAK) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash.

2SB1386PT

PNP Epitaxial Transistor

VOLTAGE20VoltsCURRENT5Amperes FEATURE *Smallflatpackage.(SC-62/SOT-89) *LowsaturationvoltageVCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A) *PC=2.0W(mountedonceramicsubstrate). *Highsaturationcurrentcapability. APPLICATION *PowerdriverandStrobeFlash

2SB1386-Q

PNPSiliconEpitaxialTransistors

2SB1386-Q

PNPTransistors

2SB1386-Q

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon

2SB1386-Q

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

2SB1386-R

PNPTransistors

Features ●LowVCE(sat). VCE(sat)=-0.35V(Typ.) (IC/IB=-4A/-0.1A) ●ExcellentDCcurrentgain ●Epitaxialplanartype ●PNPsilicontransistor

2SB1386-R

PNPTransistors

2SB1386-R

PNPSiliconEpitaxialTransistors

2SB1386-R

PNPSiliconEpitaxialTransistors

Features •LowCollectorSaturationVoltage •Execllentcurrent-to-gaincharacteristics •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableupon