2SB1375

SiliconPNPTripleDiffusedType

2SB1375

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2012 •Lowcollectorsaturationvoltage: VCE(SAT)=-1.5V(Max)atIC=-2A,IB=-0.2A •Collectorpowerdissipation: PC=25W(TC=25℃) APPLICATIONS •Audiofrequencypoweramplifier

2SB1375

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2012 •Lowcollectorsaturationvoltage: VCE(SAT)=-1.5V(Max)atIC=-2A,IB=-0.2A •Collectorpowerdissipation: PC=25W(TC=25℃) APPLICATIONS •Audiofrequencypoweramplifier

2SB1375

TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIER)

AudioFrequencyPowerAmplifier •Lowsaturationvoltage:VCE(sat)=−1.5V(max) (IC=−2A,IB=−0.2A) •Highpowerdissipation:PC=25W(Tc=25°C) •Collectormetal(fin)iscoveredwithmoldresin •Complementaryto2SD2012

2SB1375

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2012 •Lowcollectorsaturationvoltage: VCE(SAT)=-1.5V(Max)atIC=-2A,IB=-0.2A •Collectorpowerdissipation: PC=25W(TC=25℃) APPLICATIONS •Audiofrequencypoweramplifier

2SB1375

SiliconPNPPowerTransistors

2SB1375

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •HighPowerDissipation:PC=25W(TC=25℃) •Lowvoltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) •CollectorMetal(Fin)isCoverdwithMoldRegin •Complementaryto2SD2012

2SB1375

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features LowVCE(sat),HighPC,complementarypairwith2SD2012. Applications Audiofrequencypoweramplifierapplications.

2SB1375

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •CollectorPowerDissipation- :Pc=25W@Tc=25°C •LowCollectorSaturationVoltage- :VCE(sat)--1.5V(Max)@(|c=-2A,IB=-0.2A) •ComplementtoType2SD2012 APPLICATIONS •Designedforaudiofrequencypo

2SB1375

TO-220-3LPlastic-EncapsulateTransistors

FEATURES HighPowerDissipation:PC=25W(TC=25℃) Lowvoltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) CollectorMetal(Fin)isCoverdwithMoldRegin Complementaryto2SD2012