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2SB1216T-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-TL-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-TL-E

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-TL-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-TL-H

Bipolar Transistor

Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-E

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1216T-H

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

ONSEMION Semiconductor

安森美半导体安森美半导体公司

产品属性

  • 产品编号:

    2SB1216T-E

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    500mV @ 200mA,2A

  • 电流 - 集电极截止(最大值):

    1µA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    200 @ 500mA,5V

  • 频率 - 跃迁:

    130MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-251-3 短引线,IPak,TO-251AA

  • 供应商器件封装:

    TP

  • 描述:

    TRANS PNP 100V 4A TP

供应商型号品牌批号封装库存备注价格
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
ON
1809+
TO-251
3675
就找我吧!--邀您体验愉快问购元件!
询价
ON Semiconductor
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
onsemi
25+
TO-251-3 短引线 IPak TO-251A
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ONSEMI
两年内
N/A
1000
原装现货,实单价格可谈
询价
SANYO
24+
SOT252
300000
询价
SANYO
2023+环保现货
TO-252
18000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
SANYO
23+
2800
正品原装货价格低
询价
ON/安森美
23+
TO-252
50000
全新原装正品现货,支持订货
询价
NEC
SOT-252
22+
6000
十年配单,只做原装
询价
更多2SB1216T供应商 更新时间2025-7-21 14:48:00