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2SA1812

High-voltageSwitchingTransistor(400V,0.5A)

ROHMRohm

罗姆罗姆半导体集团

2SA1812

PNPTransistors

■Features ●Highbreakdownvoltage,BVCEO=-400V. ●Highswitchingspeed,typicallytf:1usatIC=-100mA. ●High-voltageSwitchingTransistor

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

2SA1812

High-voltageSwitchingTransistor(Telephonepowersupply)

High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati

ROHMRohm

罗姆罗姆半导体集团

2SA1812

High-voltageSwitchingTransistor(-400V,-0.5A)

High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati

ROHMRohm

罗姆罗姆半导体集团

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