首页 >2SA1381E-RA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNPEpitaxialSiliconTransistor Features •HighVoltage:VCEO=-300V •LowReverseTransferCapacitance:Cre=2.3pFatVCB=-30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SC3503/KSC3503 Applications •Audio,VoltageAmplifi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
High-DefinitionCRTDisplay,VideoOutput High-DefinitionCRTDisplay,VideoOutputApplications Features •Highbreakdownvoltage:VCEO≥300V. •Smallreversetransfercapacitanceandexcellenthighfrequencycharacteristic:Cre=1.8pF(NPN),2.3pF(PNP),VCB=30V. •AdoptionofMBITprocess. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
PNPEpitaxialSiliconTransistor Features •HighVoltage:VCEO=-300V •LowReverseTransferCapacitance:Cre=2.3pFatVCB=-30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SC3503/KSC3503 Applications •Audio,VoltageAmplifi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscSiliconPNPPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PNPEpitaxialSiliconTransistor Features •HighVoltage:VCEO=-300V •LowReverseTransferCapacitance:Cre=2.3pFatVCB=-30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SC3503/KSC3503 Applications •Audio,VoltageAmplifi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor Features •HighVoltage:VCEO=-300V •LowReverseTransferCapacitance:Cre=2.3pFatVCB=-30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SC3503/KSC3503 Applications •Audio,VoltageAmplifi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor Features •HighVoltage:VCEO=-300V •LowReverseTransferCapacitance:Cre=2.3pFatVCB=-30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SC3503/KSC3503 Applications •Audio,VoltageAmplifi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PNPEpitaxialSiliconTransistor Features •HighVoltage:VCEO=-300V •LowReverseTransferCapacitance:Cre=2.3pFatVCB=-30V •ExcellentGainLinearityforlowTHD •HighFrequency:150MHz •FullthermalandelectricalSpicemodelsareavailable •Complementto2SC3503/KSC3503 Applications •Audio,VoltageAmplifi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
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