2SA1163-GR

Audio Frequency General Purpose Amplifier Applications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC2713 •Smallpackage

2SA1163-GR,LF

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-236-3，SC-59，SOT-23-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 120V 0.1A SMINI

Toshiba Semiconductor and Storage

2SA1163

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPUFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC2713 •Smallpackage

2SA1163

AudioFrequencyGeneralPurposeAmplifierApplications

2SA1163

SiliconPNPEpitaxialType

Features •Highvoltage. •Smallpackage. •HighhFE. •Lownoise.

2SA1163

NewJerseySemi-ConductorProducts,

NewJerseySemi-ConductorProducts

2SA1163

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltage:VCEO=−120V •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=200~700 •Lownoise:NF=1dB(typ.),10dB(max) •Complementaryto2SC2713 •Smallpackage

2SA1163-G

PNPTransistors

2SA1163-G-HF

PNPTransistors

2SA1163-L

PNPTransistors

2SA1163-L-HF

PNPTransistors