2N7002ESEPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT500mAmpere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapabilit

2N7002ESPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT0.300Ampere CONSTRUCTION *N-ChannelEnhancementwithESDprotectionininput MARKING *PK1 FEATURE *Smallsurfacemountingtype.(SOT-23) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturation

2N7002F

TrenchMOSLogicLevelFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Veryfastswitching ■Surface-mountedpackage ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-

2N7002F

N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFETs

2N7002-G

MOSFET

MOSFET(N-Channel) RoHSDevice Features Powerdissipation:0.35W

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFETs

2N7002-G

MOSFET

2N7002-G

N-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andthehi

2N7002H

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. •MotorControl •PowerManagementFunctions FeaturesandBenefits •N-Channel