首页 >2N6438P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscSiliconPNPPowerTransistor FEATURES ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-120V(Min) ·LowSaturationVoltage- :VCE(sat)=-1.0V(Max)@IC=-10A DESCRIPTION ·Designedforuseinpoweramplifierandswitchingcircuits applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGH-POWERPNPSILICONTRANSISTORS HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto2N | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
SiliconPNPPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIGHPOWERPNPSILICONTRANSISTORS DESCRIPTION DesignedforuseinIndustrial-MilitaryPowerAmplifierandSwitchingCircuitApplications | SEME-LAB Seme LAB | SEME-LAB | ||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3package •HighDCcurrentgain •Fastswitchingtimes •Lowcollectorsaturationvoltage •Complementtotype2N6338~2N6341 APPLICATIONS •Foruseinindustrial-militarypoweramplifierandswitchingcircuitapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
High-PowerPNPSiliconTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
HIGH-POWERPNPSILICONTRANSISTORS HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGainhFE=20-80©lc=10A=12(Min)®lc=25A *LowCollector-EmitterSaturationVoltageVCB(sat)=1.0V(Max.)@lc=10A,IB=1.0A *Complementto | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 | boca | ||
POWERTRANSISTORSPNPSILICON High-PowerPNPSiliconTransistors ...designedforuseinindustrial–militarypoweramplifierandswitchingcircuitapplications. •HighCollector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)—2N6437=120Vdc(Min)—2N6438 •HighDCCurrentGain—hFE=20–80@IC=10Adc=12( | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERTRANSISTORS(25A,200W) HIGH-POWERPNPSILICONTRANSISTORS ...designedforuseinindustrialpoweramplifiersandswitchingcircuitapplications. FEATURES: *HighDCCurrentGain hFE=20-80©lc=10A =12(Min)®lc=25A *LowCollector-EmitterSaturationVoltage VCB(sat)=1.0V(Max.)@lc=10A,IB | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 | MOSPEC |
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