| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
POWER DERATING COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION •·HighDCCurrentGain- :hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage- :VCEO(SUS)=-60V(Min) •LowCollector-EmitterSaturationVoltage- :VCE(sat)=-2.0V(Max)@IC=-4A •ComplementtoType2N6043 APPLICATIONS •Designedforgeneralpurposeamp | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
POWER TRANSISTORS(10A,80W) ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto | MOSPEC MOSPEC |  | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 | bocaBoca semiconductor corporation 博卡博卡半导体公司 |  | ||
NPN SILICON TRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites. | CentralCentral Semiconductor Corp 美国中央半导体 |  | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | | ||
POWER TRANSISTORS(10A,80W) ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto | MOSPEC MOSPEC | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 | bocaBoca semiconductor corporation 博卡博卡半导体公司 | | ||
NPN SILICON TRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites. | CentralCentral Semiconductor Corp 美国中央半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheCENTRALSEMICONDUCTOR2N6040and2N6043SeriestypesareComplementarySiliconPowerTransistors,manufacturedbytheepitaxialbaseprocess,designedforgeneralpurposeamplifierapplications. MARKING:FULLPARTNUMBER | CentralCentral Semiconductor Corp 美国中央半导体 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-80V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-2.0V(Max)@IC=-4A •ComplementtoType2N6044 APPLICATIONS •Designedforgeneralpurposeamplifierandl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
POWER DERATING COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
POWER TRANSISTORS(10A,80W) ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto | MOSPEC MOSPEC | | ||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 | bocaBoca semiconductor corporation 博卡博卡半导体公司 | | ||
NPN SILICON TRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites. | CentralCentral Semiconductor Corp 美国中央半导体 | | ||
PNP DARLINGTON TRANSISTOR COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
POWER DERATING COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
COMPLEMENTARY SILICON POWER TRANSISTORS Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-P+Darl+Di
- 性质：
低频或音频放大 （LF）_开关管 （S）_功率放大 （L
- 封装形式：
直插封装
- 极限工作电压：
60V
- 最大电流允许值：
8A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD646,BD698,BD898,BDW74A,BDX54A,FC75B,
- 最大耗散功率：
75W
- 放大倍数：
β>1000
- 图片代号：
B-45
- vtest：
60
- htest：
999900
- atest：
8
- wtest：
75
产品属性
- 产品编号：
2N6040
- 制造商：
onsemi
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
散装
- 晶体管类型：
PNP - 达林顿
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
2V @ 16mA，4A
- 电流 - 集电极截止（最大值）：
20µA
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
1000 @ 4A，4V
- 工作温度：
-65°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-220-3
- 供应商器件封装：
TO-220
- 描述：
TRANS PNP DARL 60V 8A TO220
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TO-220 |
10000 |
全新 |
询价 | ||||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ONSEMI |
2021+ |
N/A |
6800 |
只有原装正品 |
询价 | ||
ON |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
ON |
23+ |
TO-TO-220 |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
ON |
20+ |
TO-220-3 |
90000 |
全新原装正品/库存充足 |
询价 | ||
ON/安森美 |
2021+ |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
MOT |
21+ |
TO-220 |
53 |
原装现货假一赔十 |
询价 | ||
MOT |
22+ |
TO-220 |
32350 |
原装正品 假一罚十 公司现货 |
询价 | ||
ON/安森美 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 |
