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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
2N5551N	文件：252.38 Kbytes Page：4 Pages	NPN Silicon Transistor Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401N	AUK AUK	AUK
2N5551	文件：131.37 Kbytes Page：2 Pages	NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications???? NPNSiliconExpitaxialPlanarTransistorforgeneralpurpose,highvoltageamplifierapplications.	SEMTECH Semtech Corporation	SEMTECH
2N5551	文件：222.18 Kbytes Page：5 Pages	NPNGeneralPurposeAmplifier Description Thisdeviceisdesignedforgeneral-purposehigh-voltageamplifiersandgasdischargedisplaydrivers.	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
2N5551	文件：165.17 Kbytes Page：2 Pages	COMPLEMENTARYSILICONGENERALPURPOSEHIGHVOLTAGETRANSISTORS 2N5400,2N5401-->PNP 2N5550,2N5551-->NPN	MICRO-ELECTRONICS Micro Electronics	MICRO-ELECTRONICS
2N5551	文件：59.95 Kbytes Page：1 Pages	SmallSignalTransistorsTO-92Case(Continued) DESCRIPTION: TheCENTRALSEMICONDUCTOR2N4400and2N4401aresiliconNPNtransistorsdesignedforgeneralpurposeamplifierandswitchingapplications.PNPcomplementarytypesare2N4402and2N4403. MARKING:FULLPARTNUMBER	CentralCentral Semiconductor Corp 美国中央半导体	Central
2N5551	文件：146.1 Kbytes Page：2 Pages	EPITAXIALPLANARNPNTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE) GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES HighCollectorBreakdwonVoltage :VCBO=180V,VCEO=160V LowLeakageCurrent. :ICBO=50nA(Max.),VCB=120V LowSaturationVoltage :VCE(sat)=0.2V(Max.),IC=50mA,IB=5mA LowNoise:NF=8dB(Max.)	KECKEC CORPORATION KEC株式会社	KEC
2N5551	文件：188.13 Kbytes Page：6 Pages	AmplifierTransistors AmplifierTransistors NPNSilicon	MotorolaMotorola, Inc 摩托罗拉	Motorola
2N5551	文件：171.22 Kbytes Page：4 Pages	NPNTransistors NPNTransistors P/bLead(Pb)-Free	WEITRONWEITRON 威堂電子科技	WEITRON
2N5551	文件：47.05 Kbytes Page：1 Pages	NPNGeneralPurposeAmplifier FEATURES&USE ★HighCollectorBreakdownVoltage;LowNoise; ★Complementaryto2N5401 ★Thisdeviceisdesignedasageneralpurposeamplifierandswitchforapplicationsrequiringhighvoltages.	AVICTEKAvic Technology Avic Technology	AVICTEK
2N5551	文件：214.49 Kbytes Page：3 Pages	NPNGeneralPurposeAmplifierTransistor Features •Thisdeviceisdesignedforgeneralpurposehighvoltageamplifiersandgasdischargedisplaydrivers. •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLrating1 •Marking:Typenumber •LeadFreeFinish/RohsCompliant(PSuffixdesignatesCo	MCCMicro Commercial Components 美微科美微科半导体公司	MCC
2N5551	文件：83.22 Kbytes Page：6 Pages	AmplifierTransistors Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode	DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd.	DAYA
2N5551	文件：30.35 Kbytes Page：1 Pages	TO-92PACKAGE	KECKEC CORPORATION KEC株式会社	KEC
2N5551	文件：57.29 Kbytes Page：2 Pages	NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR NPNEPITAXIALPLANARSILICONHIGHVOLTAGETRANSISTOR HighVoltageNPNTransistorForGeneralPurposeAndTelephonyApplications.	bocaBoca semiconductor corporation 博卡博卡半导体公司	boca
2N5551	文件：199.92 Kbytes Page：3 Pages	NPNSiliconTransistor(GeneralpurposeamplifierHighvoltageapplication) Descriptions •Generalpurposeamplifier •Highvoltageapplication Features •Highcollectorbreakdownvoltage:VCBO=180V,VCEO=160V •Lowcollectorsaturationvoltage:VCE(sat)=0.5V(MAX.) •Complementarypairwith2N5401	AUK AUK	AUK
2N5551	文件：66.71 Kbytes Page：2 Pages	TO-92Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.6A Collector-basevoltage V(BR)CBO:180V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃	TEL TRANSYS Electronics Limited	TEL
2N5551	文件：71.63 Kbytes Page：6 Pages	AmplifierTransistors	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
2N5551	文件：106.28 Kbytes Page：2 Pages	GeneralPurposeSi-EpitaxialPlanarTransistors •Powerdissipation625mW •PlasticcaseTO-92 •Weightapprox.0.18g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedinammopack	DiotecDIOTEC 德欧泰克	Diotec
2N5551	文件：188.13 Kbytes Page：6 Pages	mplifierTransistors(NPNSilicon) AmplifierTransistors NPNSilicon Features •Pb−FreePackagesareAvailable*	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
2N5551	文件：207.83 Kbytes Page：2 Pages	NPNSiliconGeneralPurposeTransistor FEATURES Switchingandamplificationinhighvoltage Lowcurrent(max.600mA) *Highvoltage(max.180v)	SECOS SeCoS Halbleitertechnologie GmbH	SECOS
2N5551	文件：693.07 Kbytes Page：1 Pages	TO-92Plastic-EncapsulateTransistors Features •Pb−FreePackagesareAvailable* •DeviceMarking:DeviceType,e.g.,2N5550,DateCode	DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd.	DAYA

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供应商	型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	2N5551N	邦得邦	2021+	TO92	5000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市振宏微科技有限公司	2N5551RL1	ON	23+	NA	4225	专做原装正品,假一罚百!	询价
深圳市鹏顺微电子科技有限公司	2N5551RL1	ON Semiconductor	2022+	TO-92-3	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市宏捷佳电子科技有限公司	2N5551RL1	onsemi	24+	TO-226-3,TO-92-3 长基体(成形	9350	独立分销商,公司只做原装,诚心经营,免费试样正品保证	询价
深圳市特顺芯科技有限公司	2N5551RL1G	ONS			1000		询价
千层芯半导体(深圳)有限公司	2N5551RL1G	ON	17+	TO-92	2500	原装现货热卖	询价
深圳市百视威讯电子科技有限公司	2N5551RL1G		23+	N/A	59810	正品授权货源可靠	询价
深圳市纳立科技有限公司	2N5551RL1G		三年内		1983	纳立只做原装正品13590203865	询价
深圳兆威电子有限公司	2N5551RL1G	ON/安森美	2019	TO-92	55000	绝对原装正品假一罚十!	询价
深圳市鹏翔伟业电子有限公司	2N5551RL1G	ON	20+	TO-92	10000	专业电子元器件一站式配单服务 QQ:646031048 可开增票	询价

更多2N5551N供应商更新时间2024-5-1 11:10:00

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