16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

文件：669.73 Kbytes 页数：39 Pages

MCNIX

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16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

文件：669.73 Kbytes 页数：39 Pages

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

文件：669.73 Kbytes 页数：39 Pages

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION The MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXICs Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. T

文件：669.73 Kbytes 页数：39 Pages

MCNIX

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

MXIC

????????????旺宏电子

16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM

GENERAL DESCRIPTION\nThe MX29F1610A is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1610A includes 16-128KB(131,072) blocks or 16-64KW(65,536) blocks. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.FEA • 5V ±10% write and erase\n• JEDEC-standard EEPROM commands\n• Endurance:100,000 cycles\n• Fast access time: 90/100/120ns\n• Sector erase architecture\n- 16 equal sectors of 128k bytes each\n- Sector erase time: 1.3 s typical\n• Auto Erase and Auto Program Algorithms\n- Automatically erases any ;

MXIC

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