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299x

Laser&detectorchip&TO-canproducts

AVAGOAVAGO TECHNOLOGIES LIMITED

安华高

AN299

EXTERNAL32.768KHZCRYSTALOSCILLATOR

SILABS

Silicon Laboratories

BA299

512MbC-dieNORFLASH

GENERALDESCRIPTION TheK8A(10/11/12/13)15Efeaturingsingle1.8Vpowersupplyisa512MbitMuxedBurstMultiBankFlashMemoryorganizedas32Mx16.Thememoryarchitectureofthedeviceisdesignedtodivideitsmemoryarraysinto512blocks(Uniformblockpart)/515blocks(Bootblockpart)withind

SamsungSamsung semiconductor

三星三星半导体

BAS299

HIGHSPEEDHIGHCURRENTQUADSWITCHINGDIODE

Features •High-SwitchingSpeed,HighCurrent •SurfaceMountPackageIdeallySuitedforAutomatedInsertion •ForGeneralPurposeSwitchingApplications •HighConductance •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

DIODESDiodes Incorporated

美台半导体

BF299

NPNHIGHVOLTAGEVIDEOAMPLIFIERS

MICRO-ELECTRONICS

Micro Electronics

BSH299

P-channelenhancementmodeMOStransistor

DESCRIPTION P-channelenhancementmodeMOStransistorinaSOT363SMDpackage. FEATURES •Lowthresholdvoltage •High-speedswitching •Nosecondarybreakdown •DirectinterfacetoC-MOS,TTL,etc. APPLICATIONS •Powermanagement •Batterypoweredapplicationse.g.cellularphones •Gen

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

BSP299

SIPMOSSmall-SignalTransistor(NchannelEnhancementmodeAvalancherated)

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

BSP299

SIPMOSSmall-SignalTransistor

SIPMOS®Small-SignalTransistor •Nchannel •Enhancementmode •Avalancherated •VGS(th)=2.1...4.0V •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen­freeaccordingtoIEC61249­2­21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BSP299

SIPMOSSmall-SignalTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

BY299

Fastsiliconrectifierdiodes

ForwardCurrent:2A ReverseVoltage:100to800V Features •Max.soldertemperture:260°C •PlasticmeterialhasULclassification94V-0

SemikronSemikron International

赛米控丹佛斯

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