25AA080DT-I/MNY集成电路（IC）的存储器规格书PDF中文资料

25AA080DT-I/MNY属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的25AA080DT-I/MNY存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Description

The Microchip Technology Inc. 25AA080C/D, 25LC080C/D (25XX080C/D*) are 8 Kbit Serial Electrically Erasable PROMs. The memory is accessed via a simple Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input.

Features

• Max. Clock 10 MHz

• Low-Power CMOS Technology:

- Max. write current: 5 mA at 5.5V

- Read current: 5 mA at 5.5V, 10 MHz

- Standby current: 5 μA at 5.5V

• 1024 x 8-bit Organization

• 16 Byte Page (‘C’ version devices)

• 32 Byte Page (‘D’ version devices)

• Self-Timed Erase and Write Cycles (5 ms max.)

• Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

• Built-In Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

- Write-protect pin

• Sequential Read

• High Reliability:

- Endurance: > 1M erase/write cycles

- Data retention: > 200 years

- ESD protection: > 4000V

• Pb-Free and RoHS Compliant

• Temperature Ranges Supported:

- Industrial (I): -40°C to +85°C

- Automotive (E): -40°C to +125°C