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2301A

9VPchannelenhancedMOSFET

FUMANFine Made Microelectronics Group Co.,Ltd.

富满微富满微电子集团股份有限公司

2301A

P-ChannelEnhancementModePowerMOSFET

Description The2301Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. AEC-Q101Qualified Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

2301H

P-ChannelEnhancementModePowerMOSFET

Description The2301Husesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

2301HA

P-ChannelEnhancementModePowerMOSFET

Description The2301HAusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

2301-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2301-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2301-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2301-RC

HighCurrentToroidInductorsHorizontalorverticalmount

BournsBourns Electronic Solutions

伯恩斯

2301-RC

HighCurrentToroidInductors

BournsBourns Electronic Solutions

伯恩斯

2301S

9VPchannelenhancedMOSFET

FUMANFine Made Microelectronics Group Co.,Ltd.

富满微富满微电子集团股份有限公司

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