首页 >20120J>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
1200VαSiCSiliconCarbideSchottkyBarrierDiode Features •ProprietaryαSiCSchottkyBarrierDiodetechnology •Negligiblereverserecoverycurrent •Maximumoperatingjunctiontemperatureof175°C •Improvedswitchinglossesvs.Sibipolardiodes •Positivetemperaturecoefficientforeaseofparalleling Applications RenewableIndustr | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
LOWVFSCHOTTKYRECTIFIER | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
LOWVFSCHOTTKYRECTIFIER | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
Ultralowforwardvoltagedrop,lowpowerloss | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
Ultralowforwardvoltagedrop,lowpowerloss | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
Ultralowforwardvoltagedrop,lowpowerloss | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
SMDSchottkyBarrierRectifiers Features -Metalsiliconjunction,majoritycarrierconduction. -Highsurgecapability. -Hightemperaturesolderingguaranteed: 260°C/10seconds. -Highcurrentcapability,lowforwardvoltagedrop. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
LowVFSchottkyRectifiers Features -Excellenthightemperaturestability. -Soft,fastswitchingcapability. -Patentedsuperbarrierrectifiertechnology. -Ultralowforwardvoltagedrop. | COMCHIPComchip Technology 典琦典琦科技股份有限公司 | COMCHIP | ||
SiliconCarbidePowerMOSFET Z-REC™RECTIFIERSandZERO-RECOVERY®RECTIFIERS SILICONCARBIDEZ-FET™MOSFET | CreeCree, Inc 科锐 | Cree | ||
CURRENTSENSOR | CUI CUI Inc. | CUI |
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